N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-262
Manufacturer: Infineon Technologies
Win Source Part Number: 069304-IRF640NLPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Family Name: IRF640
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 67nC @ 10V
Max Input Capacitance: 1160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): SiHF640L; SiHF640L-E3; IRF640LPBF; IRF640L;
Introduction Date: January 08, 2004
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
IRF640 - 12V-300V N-CHANNEL POWE
MOSFET N-CH 200V 18A TO262
MOSFET N-CH 200V 18A TO262 Product overview: IRF640NLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF640NLPBF can be used for catalog matching and distributor lookup.
200V 18A 150mΩ@11A,10V 150W 4V@250uA null TO-262-3 MOSFETs ROHS
MOSFET MOSFT 200V 18A 150mOhm 44.7nC
N CHANNEL MOSFET, 200V, 18A, TO-262; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 200V 18A TO262
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF640NLPBF-ND | 069304-IRF640NLPBF | IRF640NLPBF | 278-IRF640NLPBF | IRF640NLPBF | IRF640NLPBF | 63J7350 | IRF640NLPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640NLPBF | Single FETs, MOSFETs | 200V 18A MOSFET Transistor | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | N Channel Mosfet, 200V, 18A, To-262; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3; TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | Tube | TO-3 | TO-262-3 Long Leads, I2PAK, TO-262AA | ||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | |||||
| PD | 150000 milliwatts | 150000 milliwatts | 150 milliwatts | 150000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
