Infineon Technologies AG 200V 18A MOSFET Transistor IRF640NLPBF

MOSFET N-CH 200V 18A TO262 Product overview: IRF640NLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF640NLPBF can be used for catalog matching and distributor lookup.

N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-262

Manufacturer: Infineon Technologies
Win Source Part Number: 069304-IRF640NLPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Family Name: IRF640
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 67nC @ 10V
Max Input Capacitance: 1160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): SiHF640L; SiHF640L-E3; IRF640LPBF; IRF640L;
Introduction Date: January 08, 2004
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

IRF640 - 12V-300V N-CHANNEL POWE

MOSFET N-CH 200V 18A TO262