The IRF630NPBF is a N-channel MOSFET designed for high-efficiency applications, featuring a maximum drain-source breakdown voltage of 200V and a continuous drain current rating of 9.3A at 25¬8C. It has a low on-resistance of 0.30,Ѷ at a gate-source voltage of 10V, making it suitable for power management tasks. The device operates within a wide temperature range of -55¬8C to 175¬8C, ensuring reliability in various environments. It is packaged in a TO-220AB case, which is favored for its thermal performance and ease of mounting in commercial and industrial applications. The IRF630NPBF is fully avalanche rated and supports fast switching, making it ideal for applications requiring high-speed operation. Additionally, it is lead-free and compliant with halogen-free standards, aligning with modern environmental regulations.
MOSFET N-CH 200V 9.3A TO220AB Product overview: IRF630NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF630NPBF can be used for catalog matching and distributor lookup.
N-Channel 200V 9.3A (Tc) 82W (Tc) Through Hole TO-220AB
MOSFET N-Channel 200V 9.3A TO220AB
MOSFET N-Channel 200V 9.3A TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 017450-IRF630NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 82W (Tc)
Family Name: IRF630
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 575pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 300 mOhm @ 5.4A, 10V
Alternative Parts (Cross-Reference): IRF630N; IRF630M; FQP12N20L; IRF630;
Introduction Date: March 01, 2004
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 9.3A TO220AB
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
MOSFET N-CH 200V 9.3A TO220AB
N CHANNEL MOSFET, 200V, 9.3A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF630NPBF | IRF630NPBF-ND | 5430068 | 017450-IRF630NPBF | IRF630NPBF | IRF630NPBF | IRF630NPBF | 63J7338 | 70017265 |
| Product Name | 200V 9.3A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630NPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | N Channel Mosfet, 200V, 9.3A, To-220Ab; Channel Type Infineon | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | |||||
| Transconductance | 0.0049 kS | 0.0049 kS | |||||||
| PD | 82 milliwatts | 82000 milliwatts | 82000 milliwatts | 82000 milliwatts |
