MOSFET P-CH 150V 13A TO220AB Product overview: IRF6215PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6215PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1046529-IRF6215PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 860pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 290 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient
P-Channel 150V 13A (Tc) 110W (Tc) Through Hole TO-220AB
MOSFET MOSFT PCh -150V -13A 290mOhm 44nC
P CHANNEL MOSFET, -150V, 13A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;TO-220AB;PD 110W;VGS +/-20
MOSFET P-CH 150V 13A TO220AB
MOSFET P-CH 150V 13A TO220AB
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Allied Electronics, Inc. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRF6215PBF | 1046529-IRF6215PBF | IRF6215PBF-ND | IRF6215PBF | 63J7332 | 70016969 | IRF6215PBF | IRF6215PBF |
| Product Name | 150V 13A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6215PBF | Single FETs, MOSFETs | MOSFET | P Channel Mosfet, -150V, 13A, To-220Ab; Channel Type Infineon | MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;TO-220AB;PD 110W;VGS +/-20 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 150 volts | 150 volts | -150 volts | 150 volts | ||||
| PD | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | Tube | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-3; TO-220 | TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 |
