Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6100PBF IRF6100PBF

Manufacturer: Infineon Technologies
Win Source Part Number: 205299-IRF6100PBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-FlipFet
Dimension: 4-FlipFet
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.1A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 21nC @ 5V
Max Input Capacitance: 1230pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 65 mOhm @ 5.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

MOSFET P-CH 20V 5.1A 4FLIPFET Product overview: IRF6100PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6100PBF can be used for catalog matching and distributor lookup.