Infineon Technologies AG Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN IRF5Y540CM

Description

Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

Utmel Electronic Limited

Description

Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

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Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN - 9152-IRF5Y540CM - Utmel Electronic Limited

Utmel Electronic Limited

Hong Kong, China

Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
9152-IRF5Y540CM

Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN 9152-IRF5Y540CM

Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

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Technical Specifications

	Utmel Electronic Limited
Product Category	Transistors
Product Number	9152-IRF5Y540CM
Product Name	Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
Polarity	N-Channel