Infineon Technologies AG Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN IRF5N4905

Description
Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN
Description
Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN

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Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN - 9152-IRF5N4905 - Utmel Electronic Limited
Hong Kong, China
Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN
9152-IRF5N4905
Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN 9152-IRF5N4905
Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN

Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN

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Technical Specifications

  Utmel Electronic Limited
Product Category Transistors
Product Number 9152-IRF5N4905
Product Name Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN
Polarity P-Channel
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