Infineon Technologies AG Single FETs, MOSFETs IRF5806TRPBF

P-Channel 20V 4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)

MOSFET P-CH 20V 4A MICRO6 Product overview: IRF5806TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5806TRPBF can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1187069-IRF5806TRPBF
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Part Status: Last Time Buy
Categories: Discrete Semiconductor Products
Supplier Device Package: Micro6(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Maximum): 2W
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 4A
Rds On (Maximum) at Id, Vgs: 86mOhm at 4A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 11.4nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 594pF at 15V