MOSFET P-CH 40V 3.4A 8SO
Manufacturer: Infineon Technologies
Win Source Part Number: 1046519-IRF5803D2TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 3.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 1110pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 112 mOhm @ 3.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
MOSFET P-CH 40V 3.4A 8SO Product overview: IRF5803D2TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 3.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5803D2TR can be used for catalog matching and distributor lookup.
P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO
MOSFET P-CH 40V 3.4A 8SO
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | IRF5803D2TR | 1046519-IRF5803D2TR | 278-IRF5803D2TR | IRF5803D2TR-ND | IRF5803D2TR |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5803D2TR | 40V 3.4A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 40 volts | 40 volts | |||
| IDSS | 3400 milliamps |
