Manufacturer: Infineon Technologies
Win Source Part Number: 017440-IRF5802TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro6(TSOP-6)
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 900mA (Ta)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 6.8nC @ 10V
Max Input Capacitance: 88pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 540mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
MOSFET N-CH 150V 900MA MICRO6
N-Channel 150V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
N-Channel 150V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
N-Channel 150V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
MOSFET N-CH 150V 900MA MICRO6 Product overview: IRF5802TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 900MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 900MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5802TRPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 150V 900MA MICRO6
MOSFET MOSFT 150V 0.9A 1200mOhm 4.5nC
MOSFET, N, 150V, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:150V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation RoHS Compliant: Yes
| Win Source Electronics | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017440-IRF5802TRPBF | 2579290P | IRF5802TRPBF | IRF5802TRPBFCT-ND | 278-IRF5802TRPBF | IRF5802TRPBF | IRF5802TRPBF | 25M9807 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5802TRPBF | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | 150V 900MA MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N, 150V, Tsop-6; Transistor Polarity Infineon |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 150 volts | 150 volts | 150 volts | |||||
| PD | 2000 milliwatts | 2000 milliwatts | 2 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; SOT23; Micro6(TSOP-6) | TSOP-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 |
