MOSFET N-CH 200V 600MA MICRO6
Manufacturer: Infineon Technologies
Win Source Part Number: 125931-IRF5801TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro6(TSOP-6)
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 600mA (Ta)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 3.9nC @ 10V
Max Input Capacitance: 88pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 360mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
MOSFET N-CH 200V 600MA MICRO6 Product overview: IRF5801TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 600MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 600MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5801TRPBF can be used for catalog matching and distributor lookup.
N-Channel 200V 600mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
N-Channel 200V 600mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
N-Channel 200V 600mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
MOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC
MOSFET N-CH 200V 600MA MICRO6
MOSFET Transistor, N Channel, 600 mA, 200 V, 2.2 ohm, 10 V, 5.5 V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF5801TRPBF | 125931-IRF5801TRPBF | 278-IRF5801TRPBF | 301631 | 301631P | IRF5801TRPBFCT-ND | IRF5801TRPBF | IRF5801TRPBF | 25M9806 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5801TRPBF | 200V 600MA MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 600 Ma, 200 V, 2.2 Ohm, 10 V, 5.5 V Rohs Compliant Infineon |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||||
| IDSS | 600 milliamps | ||||||||
| PD | 2000 milliwatts | 2000 milliwatts | 2 milliwatts |
