Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5800TR IRF5800TR

Description
Manufacturer: Infineon Technologies Win Source Part Number: 109722-IRF5800TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Micro6(TSOP-6) Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 535pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 4A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 109722-IRF5800TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Micro6(TSOP-6) Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 535pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 4A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5800TR - 109722-IRF5800TR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5800TR
109722-IRF5800TR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5800TR 109722-IRF5800TR
Manufacturer: Infineon Technologies Win Source Part Number: 109722-IRF5800TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Micro6(TSOP-6) Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 535pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 4A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 109722-IRF5800TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro6(TSOP-6)
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 535pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF5800TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
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P-Channel 30V 4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)

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Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF5800TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF5800TR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF5800TR
MOSFET P-CH 30V 4A MICRO6

MOSFET P-CH 30V 4A MICRO6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 109722-IRF5800TR IRF5800TR-ND IRF5800TR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5800TR Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts
PD 2000 milliwatts
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