Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5800 IRF5800

Manufacturer: Infineon Technologies
Win Source Part Number: 135226-IRF5800
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro6(TSOP-6)
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 535pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

MOSFET P-CH 30V 4A MICRO6 Product overview: IRF5800 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5800 can be used for catalog matching and distributor lookup.

P-Channel 30V 4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)