Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540NSPBF IRF540NSPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 092541-IRF540NSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Family Name: IRF540NS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 71nC @ 10V Max Input Capacitance: 1960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 44 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): HUF76629D3ST-F085; BUK7631-100E; BUK7631-100E,118; FS50VSJ-2; Introduction Date: March 18, 2004 ECCN: EAR99 Country of Origin: China, Mexico, Republic of Korea Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 092541-IRF540NSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Family Name: IRF540NS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 71nC @ 10V Max Input Capacitance: 1960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 44 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): HUF76629D3ST-F085; BUK7631-100E; BUK7631-100E,118; FS50VSJ-2; Introduction Date: March 18, 2004 ECCN: EAR99 Country of Origin: China, Mexico, Republic of Korea Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540NSPBF
092541-IRF540NSPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540NSPBF 092541-IRF540NSPBF
Manufacturer: Infineon Technologies Win Source Part Number: 092541-IRF540NSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Family Name: IRF540NS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 71nC @ 10V Max Input Capacitance: 1960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 44 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): HUF76629D3ST-F085; BUK7631-100E; BUK7631-100E,118; FS50VSJ-2; Introduction Date: March 18, 2004 ECCN: EAR99 Country of Origin: China, Mexico, Republic of Korea Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 092541-IRF540NSPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Family Name: IRF540NS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 1960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 44 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): HUF76629D3ST-F085; BUK7631-100E; BUK7631-100E,118; FS50VSJ-2;
Introduction Date: March 18, 2004
ECCN: EAR99
Country of Origin: China, Mexico, Republic of Korea
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
100V 33A MOSFET Transistor
278-IRF540NSPBF
100V 33A MOSFET Transistor 278-IRF540NSPBF
MOSFET N-CH 100V 33A D2PAK Product overview: IRF540NSPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF540NSPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 33A D2PAK Product overview: IRF540NSPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF540NSPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF540NSPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF540NSPBF-ND
Single FETs, MOSFETs IRF540NSPBF-ND
N-Channel 100V 33A (Tc) 130W (Tc) Surface Mount D2PAK

N-Channel 100V 33A (Tc) 130W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF540NSPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF540NSPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF540NSPBF
MOSFET N-CH 100V 33A D2PAK

MOSFET N-CH 100V 33A D2PAK

Supplier's Site
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20 - 70016967 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20
70016967
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20 70016967
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20

Supplier's Site
Transistor - 17381444 - Radwell International
Willingboro, NJ, United States
Transistor
17381444
Transistor 17381444
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 33A, 100V, 0.044OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263, MARKING CODE 94-2358. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 33A, 100V, 0.044OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263, MARKING CODE 94-2358. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
MOSFET N-CH 100V 33A D2PAK - 376-IRF540NSPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 33A D2PAK
376-IRF540NSPBF
MOSFET N-CH 100V 33A D2PAK 376-IRF540NSPBF
MOSFET N-CH 100V 33A D2PAK

MOSFET N-CH 100V 33A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. Radwell International Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 092541-IRF540NSPBF 278-IRF540NSPBF IRF540NSPBF-ND IRF540NSPBF 70016967 17381444 376-IRF540NSPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540NSPBF 100V 33A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20 Transistor MOSFET N-CH 100V 33A D2PAK
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts 100 volts 100 volts
PD 130000 milliwatts 130000 milliwatts 130000 milliwatts 130000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK Tube TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB D2Pak
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