N-Channel 100V 33A (Tc) 130W (Tc) Surface Mount D2PAK
Manufacturer: Infineon Technologies
Win Source Part Number: 092541-IRF540NSPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Family Name: IRF540NS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 1960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 44 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): HUF76629D3ST-F085; BUK7631-100E; BUK7631-100E,118; FS50VSJ-2;
Introduction Date: March 18, 2004
ECCN: EAR99
Country of Origin: China, Mexico, Republic of Korea
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 33A D2PAK Product overview: IRF540NSPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF540NSPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 33A D2PAK
MOSFET N-CH 100V 33A D2PAK
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 33A, 100V, 0.044OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263, MARKING CODE 94-2358. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Allied Electronics, Inc. | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF540NSPBF-ND | 092541-IRF540NSPBF | 278-IRF540NSPBF | IRF540NSPBF | 376-IRF540NSPBF | 70016967 | 17381444 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540NSPBF | 100V 33A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 100V 33A D2PAK | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20 | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | Tube | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2Pak | ||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | |||
| PD | 130000 milliwatts | 130000 milliwatts | 130000 milliwatts | 130000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
