Infineon Technologies AG Single FETs, MOSFETs IRF540NPBF

Description
MOSFET N-CH 100V 33A TO220AB
  • Single FETs, MOSFETs - IRF540NPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRF540NPBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540NPBF - 093662-IRF540NPBF - Win Source Electronics
    Win Source Electronics
  • Transistor - 66776938 - Radwell International
    Radwell International
  • N Channel, Mosfet, 100V, 33A, To-220Ab; Channel Type Infineon - 63J7319 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF540NPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg - 70016966 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
MOSFET N-CH 100V 33A TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF540NPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF540NPBF
Single FETs, MOSFETs IRF540NPBF
MOSFET N-CH 100V 33A TO220AB

MOSFET N-CH 100V 33A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF540NPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF540NPBF-ND
Single FETs, MOSFETs IRF540NPBF-ND
N-Channel 100V 33A (Tc) 130W (Tc) Through Hole TO-220AB

N-Channel 100V 33A (Tc) 130W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540NPBF - 093662-IRF540NPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540NPBF
093662-IRF540NPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540NPBF 093662-IRF540NPBF
Manufacturer: Infineon Technologies Win Source Part Number: 093662-IRF540NPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Family Name: IRF540N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 71nC @ 10V Max Input Capacitance: 1960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 44 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): IRF540N_NL; IRF540N_R4942; SMP40N10; Introduction Date: November 03, 2003 ECCN: EAR99 Country of Origin: China, Mexico Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 093662-IRF540NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Family Name: IRF540N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 1960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 44 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): IRF540N_NL; IRF540N_R4942; SMP40N10;
Introduction Date: November 03, 2003
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
100V 33A MOSFET Transistor
278-IRF540NPBF
100V 33A MOSFET Transistor 278-IRF540NPBF
MOSFET N-CH 100V 33A TO220AB Product overview: IRF540NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF540NPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 33A TO220AB Product overview: IRF540NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF540NPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF540NPBF
MOSFET IRF540NPBF
MOSFET MOSFT 100V 33A 44mOhm 47.3nC

MOSFET MOSFT 100V 33A 44mOhm 47.3nC

Buy Now Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF540NPBF
Triode/MOS Tube/Transistor >> MOSFETs IRF540NPBF
100V 33A 44mΩ@10V,16A 130W 4V@250uA N Channel TO-220AB MOSFETs ROHS

100V 33A 44mΩ@10V,16A 130W 4V@250uA N Channel TO-220AB MOSFETs ROHS

Supplier's Site Datasheet
Transistor - 66776938 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
66776938
Transistor 66776938
POWER MOSFET, N CHANNEL, 100 V, 33 A, 0.044 OHM, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER MOSFET, N CHANNEL, 100 V, 33 A, 0.044 OHM, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
N Channel, Mosfet, 100V, 33A, To-220Ab; Channel Type Infineon - 63J7319 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel, Mosfet, 100V, 33A, To-220Ab; Channel Type Infineon
63J7319
N Channel, Mosfet, 100V, 33A, To-220Ab; Channel Type Infineon 63J7319
N CHANNEL, MOSFET, 100V, 33A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL, MOSFET, 100V, 33A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF540NPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF540NPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF540NPBF
MOSFET N-CH 100V 33A TO220AB

MOSFET N-CH 100V 33A TO220AB

Supplier's Site
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg - 70016966 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg
70016966
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg 70016966
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industria l applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Feature: Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free

Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.


Feature:

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free
Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Radwell International Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF540NPBF IRF540NPBF-ND 093662-IRF540NPBF 278-IRF540NPBF IRF540NPBF IRF540NPBF 66776938 63J7319 IRF540NPBF 70016966
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540NPBF 100V 33A MOSFET Transistor MOSFET Triode/MOS Tube/Transistor >> MOSFETs Transistor N Channel, Mosfet, 100V, 33A, To-220Ab; Channel Type Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts 100 volts 100 volts 100 volts
IDSS 33000 milliamps 33000 milliamps
PD 130000 milliwatts 130000 milliwatts 140 milliwatts 130000 milliwatts 130000 milliwatts
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