MOSFET N-CH 100V 33A TO220AB
N-Channel 100V 33A (Tc) 130W (Tc) Through Hole TO-220AB
POWER MOSFET, N CHANNEL, 100 V, 33 A, 0.044 OHM, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: Infineon Technologies
Win Source Part Number: 093662-IRF540NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Family Name: IRF540N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 1960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 44 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): IRF540N_NL; IRF540N_R4942; SMP40N10;
Introduction Date: November 03, 2003
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industria
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Feature:
MOSFET N-CH 100V 33A TO220AB
100V 33A 44mΩ@10V,16A 130W 4V@250uA N Channel TO-220AB MOSFETs ROHS
MOSFET MOSFT 100V 33A 44mOhm 47.3nC
N CHANNEL, MOSFET, 100V, 33A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Radwell International | Win Source Electronics | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF540NPBF | IRF540NPBF-ND | 66776938 | 093662-IRF540NPBF | 70016966 | IRF540NPBF | IRF540NPBF | IRF540NPBF | 63J7319 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540NPBF | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | N Channel, Mosfet, 100V, 33A, To-220Ab; Channel Type Infineon |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | |||||
| IDSS | 33000 milliamps | 33000 milliamps | |||||||
| PD | 130000 milliwatts | 130000 milliwatts | 130000 milliwatts | 130000 milliwatts |
