Manufacturer: Infineon Technologies
Win Source Part Number: 040683-IRF540NLPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 1960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 44 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
MOSFET N-Channel HEXFET 100V 33A TO262
MOSFET N-CH 100V 33A TO262 Product overview: IRF540NLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF540NLPBF can be used for catalog matching and distributor lookup.
N-Channel 100V 33A (Tc) 130W (Tc) Through Hole TO-262
N CHANNEL MOSFET, 100V, 33A, TO-262; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 100V 33A TO-262
MOSFET N-CH 100V 33A TO262
MOSFET N-CH 100V 33A TO262
MOSFET MOSFT 100V 33A 44mOhm 47.3nC
N CHANNEL MOSFET, 100V, 33A, TO-262; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:33A; ON RESISTANCE RDS(ON):0.044OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V; MSL:-ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 040683-IRF540NLPBF | 1658115 | 278-IRF540NLPBF | IRF540NLPBF-ND | 63J7318 | 376-IRF540NLPBF | IRF540NLPBF | IRF540NLPBF | IRF540NLPBF | 66776934 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540NLPBF | MOSFETs | 100V 33A MOSFET Transistor | Single FETs, MOSFETs | N Channel Mosfet, 100V, 33A, To-262; Channel Type Infineon | MOSFET N-CH 100V 33A TO-262 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||||||
| PD | 130000 milliwatts | 140 milliwatts | 130000 milliwatts | 130000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | SOT3; TO-262 | I2pak (to-262) | Tube | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-3 | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
