Manufacturer: Infineon Technologies
Win Source Part Number: 136537-IRF5210LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 38A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 230nC @ 10V
Max Input Capacitance: 2780pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 38A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Through Hole TO-262
MOSFET P-CH 100V 38A TO262 Product overview: IRF5210LPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 38A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5210LPBF can be used for catalog matching and distributor lookup.
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-262;PD 200W;VGS +/-20V
MOSFET P-CH 100V 38A TO262
DISCONTINUED BY MANUFACTURER, MOSFET TRANSISTOR, P CHANNEL, 40 A, -100 V, 60 MOHM, -10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-CH 100V 38A TO262
MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC
| Win Source Electronics | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Allied Electronics, Inc. | ODG (Origin Data Global) | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 136537-IRF5210LPBF | 1657567 | IRF5210LPBF-ND | 278-IRF5210LPBF | 70017574 | IRF5210LPBF | 66776894 | IRF5210LPBF | IRF5210LPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5210LPBF | MOSFETs | Single FETs, MOSFETs | 100V 38A MOSFET Transistor | MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-262;PD 200W;VGS +/-20V | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| V(BR)DSS | 100 volts | -100 volts | 100 volts | ||||||
| PD | 3100 to 170000 milliwatts | 200 milliwatts | 200000 milliwatts | 3100 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; TO-262 | I2pak (to-262) | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA |
