The 1382325-IRF520NL is an N-Channel MOSFET from the HEXFET series manufactured by Infineon Technologies. It features a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current rating of 9.7A at 25¬8C. The on-resistance (Rds On) is specified at a maximum of 200mOhm when conducting 5.7A at a gate-source voltage (Vgs) of 10V. The threshold voltage (Vgs(th)) is rated at a maximum of 4V at a drain current of 250¬µA. This MOSFET has a maximum power dissipation of 3.8W at ambient temperature and can handle up to 48W when the case temperature is controlled. It operates within a temperature range of -55¬8C to 175¬8C. The device is packaged in a TO-262-3 case with long leads, suitable for through-hole mounting. The gate charge (Qg) is rated at a maximum of 25nC at 10V, and the input capacitance (Ciss) is 330pF at 25V. Engineers considering this component should note that it is classified as obsolete, which may affect availability and support. The product is RoHS non-compliant and has a moisture sensitivity level of 1, indicating it can be handled without special precautions.
MOSFET N-CH 100V 9.7A TO262 Product overview: IRF520NL from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 9.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 9.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF520NL can be used for catalog matching and distributor lookup.
Win Source Part Number: 1382325-IRF520NL
Category: Discrete Semiconductor Products>Transistors
Series: HEXFET®
Package: Tube
Standard Package: 50 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
N-Channel 100V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Through Hole TO-262
MOSFET N-CH 100V 9.7A TO262
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 278-IRF520NL | 1382325-IRF520NL | IRF520NL-ND | IRF520NL |
| Product Name | 100V 9.7A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 3800 milliwatts | 3800 to 48000 milliwatts |
