Infineon Technologies AG Single FETs, MOSFETs IRF4104L

Description
MOSFET N-CH 40V 75A TO262
Description
MOSFET N-CH 40V 75A TO262
Datasheet
Datasheet Summary
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The IRF4104L is an automotive-grade N-channel MOSFET in a TO-262 package, designed for high-efficiency switching applications. It has a drain-to-source voltage rating of 40 V, a continuous drain current of 75 A at TC = 25°C (package limited), and a maximum junction temperature of 175°C. The device features a static on-resistance of up to 5.5 mΩ at VGS = 10 V and ID = 75 A, with repetitive avalanche capability and fast switching performance. Internal inductances are 4.5 nH for drain and 7.5 nH for source. Thermal resistance from junction to case is 1.05 °C/W.

Datasheet Summary
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The IRF4104L is an automotive-grade N-channel MOSFET in a TO-262 package, designed for high-efficiency switching applications. It has a drain-to-source voltage rating of 40 V, a continuous drain current of 75 A at TC = 25°C (package limited), and a maximum junction temperature of 175°C. The device features a static on-resistance of up to 5.5 mΩ at VGS = 10 V and ID = 75 A, with repetitive avalanche capability and fast switching performance. Internal inductances are 4.5 nH for drain and 7.5 nH for source. Thermal resistance from junction to case is 1.05 °C/W.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF4104L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF4104L
Single FETs, MOSFETs IRF4104L
MOSFET N-CH 40V 75A TO262

MOSFET N-CH 40V 75A TO262

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF4104L
Product Name Single FETs, MOSFETs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts
IDSS 75000 milliamps
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