The Infineon N-Channel MOSFET, part number 34AC1769, features a maximum drain-source voltage of 75V and a continuous drain current rating of 106A at a case temperature of 25¬8C. It has an ultra-low on-resistance of 5.9 mOc at a gate-source voltage of 10V, making it suitable for applications requiring high efficiency. The device operates within a junction temperature range of -55¬8C to +175¬8C and supports fast switching capabilities, which is beneficial for dynamic applications. It is also rated for repetitive avalanche operation, allowing for robust performance in demanding environments. The MOSFET is packaged in a TO-263 form factor and is RoHS compliant, ensuring it meets environmental standards. This component is ideal for industrial motor drive applications and other high-power switching scenarios.
MOSFET N-CH 75V 106A D2PAK
Manufacturer: Infineon Technologies
Win Source Part Number: 017429-IRF3808STRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Family Name: IRF3808S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 106A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 5310pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 82A, 10V
Alternative Parts (Cross-Reference): BUK664R8-75C,118; SUM110N08-07L; SUM110N08-07L-E3;
Introduction Date: July 02, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
N-Channel 75V 106A (Tc) 200W (Tc) Surface Mount D2PAK
N-Channel 75V 106A (Tc) 200W (Tc) Surface Mount D2PAK
N-Channel 75V 106A (Tc) 200W (Tc) Surface Mount D2PAK
MOSFET N-CH 75V 106A D2PAK Product overview: IRF3808STRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 106A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 106A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3808STRLPBF can be used for catalog matching and distributor lookup.
MOSFET N-Channel HEXFET 75V 106A D2PAK
MOSFET N-Channel HEXFET 75V 106A D2PAK
MOSFET N-Channel HEXFET 75V 106A D2PAK
MOSFET, N-CH, 75V, 106A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:106A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET MOSFT 75V 105A 7mOhm 150nC
MOSFET N-CH 75V 106A D2PAK
(PRICE/TC) MOSFET, N-CH, 75V, 106A, TO-263; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:106A; DRAIN SOURCE VOLTAGE VDS:75V; ON RESISTANCE RDS(ON):0.0059OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | IRF3808STRLPBF | 017429-IRF3808STRLPBF | IRF3808STRLPBFTR-ND | 278-IRF3808STRLPBF | 9154941P | 9154941 | 34AC1769 | IRF3808STRLPBF | IRF3808STRLPBF | 108052080 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3808STRLPBF | Single FETs, MOSFETs | 75V 106A MOSFET Transistor | MOSFETs | MOSFETs | Mosfet, N-Ch, 75V, 106A, To-263; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 75 volts | 75 volts | 75 volts | |||||||
| IDSS | 106000 milliamps | 106000 milliamps | ||||||||
| PD | 200000 milliwatts | 200000 milliwatts | 200 milliwatts |
