Manufacturer: Infineon Technologies
Win Source Part Number: 1187004-IRF3805SPBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 75A
Rds On (Maximum) at Id, Vgs: 3.3mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 290nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 7960pF at 25V
N-Channel 55V 75A (Tc) 300W (Tc) Surface Mount D2PAK
MOSFET N-CH 55V 75A D2PAK Product overview: IRF3805SPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3805SPBF can be used for catalog matching and distributor lookup.
Specifically designed for Automotive applications, ID = 75 A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety
of other applications.
Features:
MOSFET N-CH 55V 75A D2PAK
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1187004-IRF3805SPBF | IRF3805SPBF-ND | 278-IRF3805SPBF | 70017274 | IRF3805SPBF |
| Product Name | FETs - Single - IRF3805SPBF | Single FETs, MOSFETs | 55V 75A MOSFET Transistor | MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 2.6Milliohms;ID 75A;D2Pak;PD 330W;VGS +/-20 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 55 volts | 55 volts | |||
| PD | 300000 milliwatts | 300000 milliwatts | 330000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
