MOSFET N-CH 55V 75A TO220AB
MOSFET N-CH 55V 75A TO220AB Product overview: IRF3805PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3805PBF can be used for catalog matching and distributor lookup.
N-Channel 55V 75A (Tc) 300W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 1046493-IRF3805PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 290nC @ 10V
Max Input Capacitance: 7960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
MOSFET N-CH 55V 75A TO220AB
MOSFET MOSFT 55V 220A 3.3mOhm 190nC
MOSFET N-CH 55V 75A TO-220AB
MOSFET, N-CH, 55V, 210A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF3805PBF | 278-IRF3805PBF | IRF3805PBF-ND | 1046493-IRF3805PBF | IRF3805PBF | IRF3805PBF | 376-IRF3805PBF | 91Y4729 |
| Product Name | Single FETs, MOSFETs | 55V 75A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3805PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 55V 75A TO-220AB | Mosfet, N-Ch, 55V, 210A, To-220Ab-3; Transistor Polarity Infineon |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | 55 volts | ||||
| IDSS | 75000 milliamps | 210000 milliamps | ||||||
| PD | 300000 milliwatts | 130 milliwatts | 300000 milliwatts | 130000 milliwatts |
