Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3805PBF IRF3805PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046493-IRF3805PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 290nC @ 10V Max Input Capacitance: 7960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046493-IRF3805PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 290nC @ 10V Max Input Capacitance: 7960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3805PBF - 1046493-IRF3805PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3805PBF
1046493-IRF3805PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3805PBF 1046493-IRF3805PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046493-IRF3805PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 290nC @ 10V Max Input Capacitance: 7960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046493-IRF3805PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 290nC @ 10V
Max Input Capacitance: 7960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
55V 75A MOSFET Transistor
278-IRF3805PBF
55V 75A MOSFET Transistor 278-IRF3805PBF
MOSFET N-CH 55V 75A TO220AB Product overview: IRF3805PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3805PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 75A TO220AB Product overview: IRF3805PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3805PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF3805PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF3805PBF
Single FETs, MOSFETs IRF3805PBF
MOSFET N-CH 55V 75A TO220AB

MOSFET N-CH 55V 75A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF3805PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF3805PBF-ND
Single FETs, MOSFETs IRF3805PBF-ND
N-Channel 55V 75A (Tc) 300W (Tc) Through Hole TO-220AB

N-Channel 55V 75A (Tc) 300W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFT 55V 220A 3.3mOhm 190nC

MOSFET MOSFT 55V 220A 3.3mOhm 190nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF3805PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF3805PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF3805PBF
MOSFET N-CH 55V 75A TO220AB

MOSFET N-CH 55V 75A TO220AB

Supplier's Site
Mosfet, N-Ch, 55V, 210A, To-220Ab-3; Transistor Polarity Infineon - 91Y4729 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 55V, 210A, To-220Ab-3; Transistor Polarity Infineon
91Y4729
Mosfet, N-Ch, 55V, 210A, To-220Ab-3; Transistor Polarity Infineon 91Y4729
MOSFET, N-CH, 55V, 210A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 55V, 210A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET N-CH 55V 75A TO-220AB - 376-IRF3805PBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 55V 75A TO-220AB
376-IRF3805PBF
MOSFET N-CH 55V 75A TO-220AB 376-IRF3805PBF
MOSFET N-CH 55V 75A TO-220AB

MOSFET N-CH 55V 75A TO-220AB

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1046493-IRF3805PBF 278-IRF3805PBF IRF3805PBF IRF3805PBF-ND IRF3805PBF IRF3805PBF 91Y4729 376-IRF3805PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3805PBF 55V 75A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 55V, 210A, To-220Ab-3; Transistor Polarity Infineon MOSFET N-CH 55V 75A TO-220AB
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 55 volts 55 volts 55 volts 55 volts
PD 300000 milliwatts 130 milliwatts 300000 milliwatts 130000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB Tube TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
Unlock Full Specs
to access all available technical data

Similar Products

DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor - QPD0020 - Qorvo
Specs
Transistor Technology / Material DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details
300V 19A MOSFET Transistor - 278-AUIRFS6535 - ERSAELECTRONICS PTE. LTD.
Specs
PD 210000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type Tube
View Details
6 suppliers