N-Channel 55V 75A (Tc) 300W (Tc) Through Hole TO-262
MOSFET N-CH 55V 75A TO262 Product overview: IRF3805LPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3805LPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1046492-IRF3805LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: IRF3805
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 290nC @ 10V
Max Input Capacitance: 7960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): BUK6E3R2-55C,127; BUK6E3R2-55C; STFI260N6F6;
Introduction Date: December 15, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
MOSFET N-CH 55V 75A TO262
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 2.6Milliohms;ID 220A;TO-262;PD 330W;gFS 75V
MOSFET N-CH 55V 75A TO262
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF3805LPBF-ND | 278-IRF3805LPBF | 1046492-IRF3805LPBF | IRF3805LPBF | 70017273 | IRF3805LPBF |
| Product Name | Single FETs, MOSFETs | 55V 75A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3805LPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 2.6Milliohms;ID 220A;TO-262;PD 330W;gFS 75V | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | SOT3; TO-262 | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
| PD | 300000 milliwatts | 300000 milliwatts | 330000 milliwatts | 300000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube |
