Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3805LPBF IRF3805LPBF

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3805LPBF - 1046492-IRF3805LPBF - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3805LPBF
1046492-IRF3805LPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3805LPBF 1046492-IRF3805LPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046492-IRF3805LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Family Name: IRF3805 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 290nC @ 10V Max Input Capacitance: 7960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V Alternative Parts (Cross-Reference): BUK6E3R2-55C,127; BUK6E3R2-55C; STFI260N6F6; Introduction Date: December 15, 2005 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046492-IRF3805LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: IRF3805
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 290nC @ 10V
Max Input Capacitance: 7960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): BUK6E3R2-55C,127; BUK6E3R2-55C; STFI260N6F6;
Introduction Date: December 15, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Supplier's Site Datasheet
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF3805LPBF-ND
Single FETs, MOSFETs IRF3805LPBF-ND
MOSFET N-CH 55V 75A TO262

MOSFET N-CH 55V 75A TO262

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF3805LPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF3805LPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF3805LPBF
MOSFET N-CH 55V 75A TO262

MOSFET N-CH 55V 75A TO262

Supplier's Site
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 2.6Milliohms;ID 220A;TO-262;PD 330W;gFS 75V - 70017273 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 2.6Milliohms;ID 220A;TO-262;PD 330W;gFS 75V
70017273
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 2.6Milliohms;ID 220A;TO-262;PD 330W;gFS 75V 70017273
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 2.6Milliohms;ID 220A;TO-262;PD 330W;gFS 75V

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 2.6Milliohms;ID 220A;TO-262;PD 330W;gFS 75V

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1046492-IRF3805LPBF IRF3805LPBF-ND IRF3805LPBF 70017273
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3805LPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 2.6Milliohms;ID 220A;TO-262;PD 330W;gFS 75V
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 55 volts 55 volts
PD 300000 milliwatts 330000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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