Infineon Technologies AG Single FETs, MOSFETs IRF3711STRL

Description
N-Channel 20V 110A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount D2PAK
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Description
N-Channel 20V 110A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

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Single FETs, MOSFETs - IRF3711STRL-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF3711STRL-ND
Single FETs, MOSFETs IRF3711STRL-ND
N-Channel 20V 110A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount D2PAK

N-Channel 20V 110A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3711STRL - 138960-IRF3711STRL - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3711STRL
138960-IRF3711STRL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3711STRL 138960-IRF3711STRL
Manufacturer: Infineon Technologies Win Source Part Number: 138960-IRF3711STRL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 44nC @ 4.5V Max Input Capacitance: 2980pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 138960-IRF3711STRL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 44nC @ 4.5V
Max Input Capacitance: 2980pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF3711STRL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF3711STRL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF3711STRL
MOSFET N-CH 20V 110A D2PAK

MOSFET N-CH 20V 110A D2PAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF3711STRL-ND 138960-IRF3711STRL IRF3711STRL
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3711STRL Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 20 volts
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