Manufacturer: Infineon Technologies
Win Source Part Number: 138960-IRF3711STRL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 44nC @ 4.5V
Max Input Capacitance: 2980pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
N-Channel 20V 110A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount D2PAK
MOSFET N-CH 20V 110A D2PAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 138960-IRF3711STRL | IRF3711STRL-ND | IRF3711STRL |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3711STRL | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 20 volts | ||
| PD | 3100 to 120000 milliwatts |
