Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3711L IRF3711L

Manufacturer: Infineon Technologies
Win Source Part Number: 1046485-IRF3711L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 44nC @ 4.5V
Max Input Capacitance: 2980pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

MOSFET N-CH 20V 110A TO-262 Product overview: IRF3711L from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 110A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 110A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF3711L can be used for catalog matching and distributor lookup.

N-Channel 20V 110A (Tc) 3.1W (Ta), 120W (Tc) Through Hole TO-262