MOSFET N-CH 100V 59A TO220AB Product overview: IRF3710ZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 59A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 59A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3710ZPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 017425-IRF3710ZPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 59A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 2900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
N-Channel 100V 59A (Tc) 160W (Tc) Through Hole TO-220AB
MOSFET N-Channel 100V 59A HEXFET TO220AB
MOSFET N-Channel 100V 59A HEXFET TO220AB
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;TO-220AB;PD 160W;-55deg
MOSFET N-CH 100V 59A TO220AB
MOSFET MOSFT 100V 59A 18mOhm 82nC Qg
MOSFET, N-CH, 100V, 59A, 175DEG C, 160W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF3710ZPBF | 017425-IRF3710ZPBF | IRF3710ZPBF-ND | 6886850 | 70016957 | IRF3710ZPBF | IRF3710ZPBF | 97K2086 |
| Product Name | 100V 59A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3710ZPBF | Single FETs, MOSFETs | MOSFETs | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;TO-220AB;PD 160W;-55deg | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 59A, 175Deg C, 160W; Channel Type Infineon |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| PD | 160 milliwatts | 160000 milliwatts | 160000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
