Infineon Technologies AG 100V 59A MOSFET Transistor IRF3710ZLPBF

MOSFET N-CH 100V 59A TO262 Product overview: IRF3710ZLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 59A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 59A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3710ZLPBF can be used for catalog matching and distributor lookup.

N-Channel 100V 59A (Tc) 160W (Tc) Through Hole TO-262

Manufacturer: Infineon Technologies
Win Source Part Number: 1186993-IRF3710ZLPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Part Status: Last Time Buy
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 160W
Alternative Parts (Cross-Reference): STI45N10F7; 2SK3479-S; IRF3710ZL; IRF3710ZLPbF;
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 59A
Rds On (Maximum) at Id, Vgs: 18mOhm at 35A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 120nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2900pF at 25V

MOSFET N-CH 100V 59A TO262

HEXFET POWER MOSFET