Infineon Technologies AG N Channel Mosfet, 100V, 57A, To-220Ab; Channel Type Infineon IRF3710PBF.

The IRF3710PbF is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications, featuring a 100V drain-source breakdown voltage and a continuous drain current of 57A at 25°C. It is packaged in a TO-220AB case with a maximum on-resistance of 23mΩ at 10V gate-source voltage. The device supports an operating junction temperature up to 175°C, has a pulsed drain current rating of 180A, and is fully avalanche rated with 20mJ of repetitive avalanche energy. Thermal resistance from junction to case is 0.75°C/W, and junction-to-ambient is 62°C/W. The package is not recommended for surface mount applications and is qualified for industrial use.