Infineon Technologies AG Single FETs, MOSFETs IRF3710L

Description
N-Channel 100V 57A (Tc) 200W (Tc) Through Hole TO-262
  • Single FETs, MOSFETs - IRF3710L-ND - DigiKey
    DigiKey
  • Integrated Circuits (ICs) - Transistors - MOSFETs - IRF3710L - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 100V 57A (Tc) 200W (Tc) Through Hole TO-262
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF3710L-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF3710L-ND
Single FETs, MOSFETs IRF3710L-ND
N-Channel 100V 57A (Tc) 200W (Tc) Through Hole TO-262

N-Channel 100V 57A (Tc) 200W (Tc) Through Hole TO-262

Buy Now Datasheet
Integrated Circuits (ICs) - Transistors - MOSFETs - IRF3710L - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - MOSFETs
IRF3710L
Integrated Circuits (ICs) - Transistors - MOSFETs IRF3710L
Integrated Circuits (ICs) - Transistors - MOSFETs

Integrated Circuits (ICs) - Transistors - MOSFETs

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number IRF3710L-ND IRF3710L
Product Name Single FETs, MOSFETs Integrated Circuits (ICs) - Transistors - MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor - TGF2819-FL - Qorvo
Qorvo
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor
TGF2819-FL
Specs
Transistor Technology / Material DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SC2812-7-TB-E - 855149-2SC2812-7-TB-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SC2812-7-TB-E
2SC2812-7-TB-E
Specs
Package Type SOT3
View Details
Infineon Technologies AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
94-2312PBF
Specs
Packing Method Tube; Tube
View Details