Infineon Technologies AG Gate Driver ICs IR2213S

1200 V high- and low-side gate driver IC with shutdown

EiceDRIVER™ 1200 V high- and low-side gate driver IC with typical 2.0 A source and 2.5 A sink currents in DSO-16 lead, wide-body package for IGBT discretes and IGBT modules.

IR2213S utilizes proprietary 1200 V HVIC and latch immune CMOS technologies which enable a rugged, monolithic construction with integrated protective features such under voltage lockout protection, shutdown, and separate logic and power ground.

The IR2213S three-phase gate driver is well suited for low- and medium- power designs up to 10 kW or higher power levels with additional external buffer current driver. IR2213S provides high performance drive capability with protective features for a cost-competitive solution.

IR2213S belongs to the 1200 V level-shift junction isolated (JI) gate driver family.

Summary of Features

• Floating channel up to 1200 V
• Tolerant to negative transient voltage
• dV/dt immune
• Gate drive supply range from 12 to 20 V
• Undervoltage lockout for both channels
• 3.3 V logic compatible
• Separate logic supply range from 3.3 V to 20 V
• Logic and power ground +/- 5 V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs

Benefits

• our monolithic high-voltage technology allows IR2213S to safely drive 110 Vac to 380 Vac applications and can withstand up to 1200 V dc voltage.
• Under-voltage lockout provides protection at low supply voltage

Applications

• Commercial heat pumps
• DIN rail power supplies
• Heating ventilation and air conditioning (HVAC)
• Industrial automation
• Industrial motor drives and controls

Designers who used this product also designed with

• IPB073N15N5 |
  N-Channel Power MOSFET
• IPT60R028G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPB073N15N5 |
  N-Channel Power MOSFET
• IPT60R028G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPB073N15N5 |
  N-Channel Power MOSFET
• IPT60R028G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET

Part No - Package - Configuration - Io+/- (typ.) - UVLO (on/off) typ.

6ED2231S12T

DSO-24

Three-phase

0.35 / 0.65 A

11.3 / 12.2 V

IR2214SS

SSOP-24

Half-bridge

2 / 3 A

9.3 / 10.2 V

6ED2230S12T

DSO-24

Three-phase

0.35 / 0.65 A

9.4 /10.4 V

IR2233S

DSO-28

Three-phase

0.25 / 0.5 A

8.2 / 8.6 V

IR2213S

DSO-16

High- and low-side

2.0 / 2.5 A

9.3 /10.2 V
Part No - Package - Configuration - Io+/- (typ.) - UVLO (on/off) typ.

IC GATE DRVR HALF-BRIDGE 16SOIC Product overview: IR2213S from Infineon Technologies is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, Gate Drivers ICs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 730-IR2213S can be used for catalog matching and distributor lookup.

Half-Bridge Gate Driver IC Non-Inverting 16-SOIC