The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5 V logic. A ground-referenced operational amplifier provides analog feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs is also derived from this resistor. An open drain FAULT signal indicates if an over-current or under voltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts. Features:
Floating Channel Designed for Bootstrap Operation
Fully Operational to +600 V
Tolerant to Negative Transient Voltage dV/dt Immune
Gate Drive Supply Range from 10 to 20 V
Under Voltage Lockout for All Channels
Over-Current Shutdown Turns Off All Six Drivers
Independent Half-Bridge Drivers
Matched Propagation Delay for All Channels
2.5 V Logic Compatible
Outputs Out of Phase with Inputs
Cross-Conduction Prevention Logic
The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5 V logic. A ground-referenced operational amplifier provides analog feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs is also derived from this resistor.
An open drain FAULT signal indicates if an over-current or under voltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.
Features:
- Floating Channel Designed for Bootstrap Operation
- Fully Operational to +600 V
- Tolerant to Negative Transient Voltage dV/dt Immune
- Gate Drive Supply Range from 10 to 20 V
- Under Voltage Lockout for All Channels
- Over-Current Shutdown Turns Off All Six Drivers
- Independent Half-Bridge Drivers
- Matched Propagation Delay for All Channels
- 2.5 V Logic Compatible
- Outputs Out of Phase with Inputs
- Cross-Conduction Prevention Logic
