Infineon Technologies AG Gate Driver ICs IR2110S

Description
500 V high-side and low-side gate driver IC with shutdown EiceDRIVER™ 500 V high and low-side gate driver IC with typical 2.5 A source and 2.5 A sink current in 16 Lead SOIC package for IGBTs and MOSFETs with level-shift technology. Also available in 14 Lead PDIP. Summary of Features Floating channel designed for bootstrap operation Fully operational to +500 V Fully operational to +600 V verstion available (IR2113S) dV/dt immune Gate drive supply range from 10 to 20 V Undervoltage lockout for both channels 3.3 V logic compatible Separate logic supply range from 3.3 V to 20 V Logic and power ground + /- 5 V offset CMOS Schmitt-triggered inputs with pull-down Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs Applications Energy Storage Systems General purpose motor drive - variating frequency and voltage Light electric vehicles (LEV) Photovoltaic Designers who used this product also designed with IRF3415S | N-Channel Power MOSFET IRFR5410 | P-Channel Power MOSFET BSC146N10LS5 | N-Channel Power MOSFET BSC072N08NS5 | N-Channel Power MOSFET IRF630N | N-Channel Power MOSFET IRFU5305 | P-Channel Power MOSFET IRFS3006 | N-Channel Power MOSFET IRFS3206 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRFP90N20D | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IRL530NS | N-Channel Power MOSFET IRL540N | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IRF3415S | N-Channel Power MOSFET IRFR5410 | P-Channel Power MOSFET BSC146N10LS5 | N-Channel Power MOSFET BSC072N08NS5 | N-Channel Power MOSFET IRF630N | N-Channel Power MOSFET IRFU5305 | P-Channel Power MOSFET IRFS3006 | N-Channel Power MOSFET IRFS3206 | N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet
Description
500 V high-side and low-side gate driver IC with shutdown EiceDRIVER™ 500 V high and low-side gate driver IC with typical 2.5 A source and 2.5 A sink current in 16 Lead SOIC package for IGBTs and MOSFETs with level-shift technology. Also available in 14 Lead PDIP. Summary of Features Floating channel designed for bootstrap operation Fully operational to +500 V Fully operational to +600 V verstion available (IR2113S) dV/dt immune Gate drive supply range from 10 to 20 V Undervoltage lockout for both channels 3.3 V logic compatible Separate logic supply range from 3.3 V to 20 V Logic and power ground + /- 5 V offset CMOS Schmitt-triggered inputs with pull-down Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs Applications Energy Storage Systems General purpose motor drive - variating frequency and voltage Light electric vehicles (LEV) Photovoltaic Designers who used this product also designed with IRF3415S | N-Channel Power MOSFET IRFR5410 | P-Channel Power MOSFET BSC146N10LS5 | N-Channel Power MOSFET BSC072N08NS5 | N-Channel Power MOSFET IRF630N | N-Channel Power MOSFET IRFU5305 | P-Channel Power MOSFET IRFS3006 | N-Channel Power MOSFET IRFS3206 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRFP90N20D | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IRL530NS | N-Channel Power MOSFET IRL540N | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IRF3415S | N-Channel Power MOSFET IRFR5410 | P-Channel Power MOSFET BSC146N10LS5 | N-Channel Power MOSFET BSC072N08NS5 | N-Channel Power MOSFET IRF630N | N-Channel Power MOSFET IRFU5305 | P-Channel Power MOSFET IRFS3006 | N-Channel Power MOSFET IRFS3206 | N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Gate Driver ICs - IR2110S - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
IR2110S
Gate Driver ICs IR2110S
500 V high-side and low-side gate driver IC with shutdown EiceDRIVER™ 500 V high and low-side gate driver IC with typical 2.5 A source and 2.5 A sink current in 16 Lead SOIC package for IGBTs and MOSFETs with level-shift technology. Also available in 14 Lead PDIP. Summary of Features Floating channel designed for bootstrap operation Fully operational to +500 V Fully operational to +600 V verstion available (IR2113S) dV/dt immune Gate drive supply range from 10 to 20 V Undervoltage lockout for both channels 3.3 V logic compatible Separate logic supply range from 3.3 V to 20 V Logic and power ground + /- 5 V offset CMOS Schmitt-triggered inputs with pull-down Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs Applications Energy Storage Systems General purpose motor drive - variating frequency and voltage Light electric vehicles (LEV) Photovoltaic Designers who used this product also designed with IRF3415S | N-Channel Power MOSFET IRFR5410 | P-Channel Power MOSFET BSC146N10LS5 | N-Channel Power MOSFET BSC072N08NS5 | N-Channel Power MOSFET IRF630N | N-Channel Power MOSFET IRFU5305 | P-Channel Power MOSFET IRFS3006 | N-Channel Power MOSFET IRFS3206 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRFP90N20D | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IRL530NS | N-Channel Power MOSFET IRL540N | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IRF3415S | N-Channel Power MOSFET IRFR5410 | P-Channel Power MOSFET BSC146N10LS5 | N-Channel Power MOSFET BSC072N08NS5 | N-Channel Power MOSFET IRF630N | N-Channel Power MOSFET IRFU5305 | P-Channel Power MOSFET IRFS3006 | N-Channel Power MOSFET IRFS3206 | N-Channel Power MOSFET 1 2 3 4 5

500 V high-side and low-side gate driver IC with shutdown

EiceDRIVER™ 500 V high and low-side gate driver IC with typical 2.5 A source and 2.5 A sink current in 16 Lead SOIC package for IGBTs and MOSFETs with level-shift technology. Also available in 14 Lead PDIP.


Summary of Features

  • Floating channel designed for bootstrap operation
  • Fully operational to +500 V
  • Fully operational to +600 V verstion available (IR2113S)
  • dV/dt immune
  • Gate drive supply range from 10 to 20 V
  • Undervoltage lockout for both channels
  • 3.3 V logic compatible
  • Separate logic supply range from 3.3 V to 20 V
  • Logic and power ground + /- 5 V offset
  • CMOS Schmitt-triggered inputs with pull-down
  • Cycle by cycle edge-triggered shutdown logic
  • Matched propagation delay for both channels
  • Outputs in phase with inputs

Applications

  • Energy Storage Systems
  • General purpose motor drive - variating frequency and voltage
  • Light electric vehicles (LEV)
  • Photovoltaic

Designers who used this product also designed with


  • IRF3415S |
    N-Channel Power MOSFET
  • IRFR5410 |
    P-Channel Power MOSFET
  • BSC146N10LS5 |
    N-Channel Power MOSFET
  • BSC072N08NS5 |
    N-Channel Power MOSFET
  • IRF630N |
    N-Channel Power MOSFET
  • IRFU5305 |
    P-Channel Power MOSFET
  • IRFS3006 |
    N-Channel Power MOSFET
  • IRFS3206 |
    N-Channel Power MOSFET
  • IPD33CN10N G |
    N-Channel Power MOSFET
  • IRFI3205 |
    N-Channel Power MOSFET
  • IRFP90N20D |
    N-Channel Power MOSFET
  • IRF9540N |
    P-Channel Power MOSFET
  • IRF9540NS |
    P-Channel Power MOSFET
  • IRFR3607 |
    N-Channel Power MOSFET
  • IRL530NS |
    N-Channel Power MOSFET
  • IRL540N |
    N-Channel Power MOSFET
  • IRF7490 |
    N-Channel Power MOSFET
  • IRF3415S |
    N-Channel Power MOSFET
  • IRFR5410 |
    P-Channel Power MOSFET
  • BSC146N10LS5 |
    N-Channel Power MOSFET
  • BSC072N08NS5 |
    N-Channel Power MOSFET
  • IRF630N |
    N-Channel Power MOSFET
  • IRFU5305 |
    P-Channel Power MOSFET
  • IRFS3006 |
    N-Channel Power MOSFET
  • IRFS3206 |
    N-Channel Power MOSFET

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Supplier's Site Datasheet
Singapore, Singapore
Gate Driver IC
730-IR2110S
Gate Driver IC 730-IR2110S
IC GATE DRVR HALF-BRIDGE 16SOIC Product overview: IR2110S from Infineon Technologies is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, Gate Drivers ICs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 730-IR2110S can be used for catalog matching and distributor lookup.

IC GATE DRVR HALF-BRIDGE 16SOIC Product overview: IR2110S from Infineon Technologies is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, Gate Drivers ICs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 730-IR2110S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Gate Drivers - IR2110S-ND - DigiKey
Thief River Falls, MN, United States
Gate Drivers
IR2110S-ND
Gate Drivers IR2110S-ND
Half-Bridge Gate Driver IC Non-Inverting 16-SOIC

Half-Bridge Gate Driver IC Non-Inverting 16-SOIC

Buy Now Datasheet
Gate Drivers - IR2110S - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Gate Drivers
IR2110S
Gate Drivers IR2110S
Half-Bridge Gate Driver IC Non-Inverting 16-SOIC

Half-Bridge Gate Driver IC Non-Inverting 16-SOIC

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. DigiKey Quarktwin Technology Ltd.
Product Category Gate Drivers Gate Drivers Gate Drivers Gate Drivers
Product Number IR2110S 730-IR2110S IR2110S-ND IR2110S
Product Name Gate Driver ICs Gate Driver IC Gate Drivers Gate Drivers
Driver Type High-side; Low-side Dual Gate Driver; Half-Bridge Dual Gate Driver Dual Gate Driver
Output Current 2.5 amps 2 amps 2 amps 2 amps
Supply Voltage 10 to 20 volts 3.3 to 20 volts 3.3 to 20 volts
Propagation Delay 94 ns
Package Type SOIC; SOIC 16W Tube SOIC; "16-SOIC (0.295"", 7.50mm Width)" SOIC; 16-SOIC (0.295\", 7.50mm Width)
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