Infineon Technologies AG Gate Driver ICs IR2109S

Description
600 V half-bridge gate driver IC with shutdown EiceDRIVER™ 600 V half bridge gate driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. For the new version with our SOI technology we recommend 2ED2109S06F, providing integrated bootstrap diode, better robustness and higher switching frequency Summary of Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20 V Undervoltage lockout for both channels 3.3 V, 5 V, and 15 V logic input compatible Cross-conduction prevention logic Matched propagation delay for both channels High side output in phase with IN input Logic and power ground + /- 5 V offset Internal 540ns dead-time Lower di/dt gate driver for better noise immunity Shut down input turns off both channels Applications Home appliances Power conversion Designers who used this product also designed with IRF1310NS | N-Channel Power MOSFET IRLR3110Z | N-Channel Power MOSFET IRF1310NS | N-Channel Power MOSFET IRLR3110Z | N-Channel Power MOSFET IRF1310NS | N-Channel Power MOSFET IRLR3110Z | N-Channel Power MOSFET
Request a Quote Datasheet
Description
600 V half-bridge gate driver IC with shutdown EiceDRIVER™ 600 V half bridge gate driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. For the new version with our SOI technology we recommend 2ED2109S06F, providing integrated bootstrap diode, better robustness and higher switching frequency Summary of Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20 V Undervoltage lockout for both channels 3.3 V, 5 V, and 15 V logic input compatible Cross-conduction prevention logic Matched propagation delay for both channels High side output in phase with IN input Logic and power ground + /- 5 V offset Internal 540ns dead-time Lower di/dt gate driver for better noise immunity Shut down input turns off both channels Applications Home appliances Power conversion Designers who used this product also designed with IRF1310NS | N-Channel Power MOSFET IRLR3110Z | N-Channel Power MOSFET IRF1310NS | N-Channel Power MOSFET IRLR3110Z | N-Channel Power MOSFET IRF1310NS | N-Channel Power MOSFET IRLR3110Z | N-Channel Power MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Gate Driver ICs - IR2109S - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
IR2109S
Gate Driver ICs IR2109S
600 V half-bridge gate driver IC with shutdown EiceDRIVER™ 600 V half bridge gate driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. For the new version with our SOI technology we recommend 2ED2109S06F, providing integrated bootstrap diode, better robustness and higher switching frequency Summary of Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20 V Undervoltage lockout for both channels 3.3 V, 5 V, and 15 V logic input compatible Cross-conduction prevention logic Matched propagation delay for both channels High side output in phase with IN input Logic and power ground + /- 5 V offset Internal 540ns dead-time Lower di/dt gate driver for better noise immunity Shut down input turns off both channels Applications Home appliances Power conversion Designers who used this product also designed with IRF1310NS | N-Channel Power MOSFET IRLR3110Z | N-Channel Power MOSFET IRF1310NS | N-Channel Power MOSFET IRLR3110Z | N-Channel Power MOSFET IRF1310NS | N-Channel Power MOSFET IRLR3110Z | N-Channel Power MOSFET

600 V half-bridge gate driver IC with shutdown

EiceDRIVER™ 600 V half bridge gate driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.

For the new version with our SOI technology we recommend 2ED2109S06F, providing integrated bootstrap diode, better robustness and higher switching frequency


Summary of Features

  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage
  • dV/dt immune
  • Gate drive supply range from 10 to 20 V
  • Undervoltage lockout for both channels
  • 3.3 V, 5 V, and 15 V logic input compatible
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • High side output in phase with IN input
  • Logic and power ground + /- 5 V offset
  • Internal 540ns dead-time
  • Lower di/dt gate driver for better noise immunity
  • Shut down input turns off both channels

Applications

  • Home appliances
  • Power conversion

Designers who used this product also designed with


  • IRF1310NS |
    N-Channel Power MOSFET
  • IRLR3110Z |
    N-Channel Power MOSFET
  • IRF1310NS |
    N-Channel Power MOSFET
  • IRLR3110Z |
    N-Channel Power MOSFET
  • IRF1310NS |
    N-Channel Power MOSFET
  • IRLR3110Z |
    N-Channel Power MOSFET
Supplier's Site Datasheet
Gate Driver IC 730-IR2109S
IC GATE DRVR HALF-BRIDGE 8SOIC Product overview: IR2109S from Infineon Technologies is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, Gate Drivers ICs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 730-IR2109S can be used for catalog matching and distributor lookup.

IC GATE DRVR HALF-BRIDGE 8SOIC Product overview: IR2109S from Infineon Technologies is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, Gate Drivers ICs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 730-IR2109S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Gate Drivers - IR2109S-ND - DigiKey
Thief River Falls, MN, United States
Gate Drivers
IR2109S-ND
Gate Drivers IR2109S-ND
Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

Buy Now Datasheet
Laguna Hills, CA, United States
PMIC - PMIC - Gate Drivers - IR2109S
1186553-IR2109S
PMIC - PMIC - Gate Drivers - IR2109S 1186553-IR2109S
Manufacturer: Infineon Technologies Win Source Part Number: 1186553-IR2109S Packaging: Tube Mounting Style: SMD Channel Type: Synchronous Input Type: Non-Inverting Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA High Side Voltage - Max (Bootstrap): 600V Categories: Integrated Circuits Supplier Device Package: 8-SOIC Status: Obsolete Temperature Range - Operating: -40°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance Family Part Number: IR2109S Manufacturer Pack Quantity: 95 MSL Level: 1 (Unlimited) Supply Voltage (V): 10V ~ 20V Rise / Fall Time: 150ns, 50ns

Manufacturer: Infineon Technologies
Win Source Part Number: 1186553-IR2109S
Packaging: Tube
Mounting Style: SMD
Channel Type: Synchronous
Input Type: Non-Inverting
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
High Side Voltage - Max (Bootstrap): 600V
Categories: Integrated Circuits
Supplier Device Package: 8-SOIC
Status: Obsolete
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Family Part Number: IR2109S
Manufacturer Pack Quantity: 95
MSL Level: 1 (Unlimited)
Supply Voltage (V): 10V ~ 20V
Rise / Fall Time: 150ns, 50ns

Buy Now
Integrated Circuits (ICs) - PMIC - Gate Drivers - IR2109S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - PMIC - Gate Drivers
IR2109S
Integrated Circuits (ICs) - PMIC - Gate Drivers IR2109S
IC GATE DRVR HALF-BRIDGE 8SOIC

IC GATE DRVR HALF-BRIDGE 8SOIC

Supplier's Site
Gate Drivers - IR2109S - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Gate Drivers
IR2109S
Gate Drivers IR2109S
Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Gate Drivers Gate Drivers Gate Drivers Gate Drivers Gate Drivers Gate Drivers
Product Number IR2109S 730-IR2109S IR2109S-ND 1186553-IR2109S IR2109S IR2109S
Product Name Gate Driver ICs Gate Driver IC Gate Drivers PMIC - PMIC - Gate Drivers - IR2109S Integrated Circuits (ICs) - PMIC - Gate Drivers Gate Drivers
Driver Type Dual Gate Driver Dual Gate Driver; Half-Bridge Dual Gate Driver Dual Gate Driver Dual Gate Driver
Output Current 0.2000 amps 0.3500 amps 0.3500 amps 0.3500 amps 0.3500 amps
Supply Voltage 10 to 20 volts 10 to 20 volts 10 to 20 volts 20 to 10 volts 10 to 20 volts
Propagation Delay 200 ns
Package Type SOIC; SOIC 8N Tube SOIC; "8-SOIC (0.154"", 3.90mm Width)" SOIC SOIC SOIC; 8-SOIC (0.154\", 3.90mm Width)
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