Infineon Technologies AG Gate Driver ICs IR2010S

200 V high-side and low-side gate driver IC with shutdown EiceDRIVER™ 200 V high and low side Gate Driver IC with typical 3 A source and 3 A sink currents in 16 Lead SOICWB package for IGBTs and MOSFETs. Also available in 14 Lead PDIP. Summary of Features Floating Channel designed for bootstrap operation Fully operational to 200 V Tolerant to negative transient voltage Tolerant to negative tansient voltage dV/dt immune Gate drive supply range from 10 V to 20 V Undervoltage lockout for both channels 3.3 V logic compatible seperate logic supply range from 3.3 V to 20 V Logic and power ground +/- 5 V offset CMOS Schmitt-triggered inputs with pull-down Shut down input turns off both channels Matched propagation delay for both channels Outputs in phase with inputs Applications 48 V intermediate bus converter (IBC) Domestic robots Fuel-cell control unit (FCCU) Power tools Designers who used this product also designed with ICE2QR0680Z | CoolSET™ Quasi Resonant BSC014N04LS | N-Channel Power MOSFET IDH10G65C5 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP200N15N3 G | N-Channel Power MOSFET IPW65R095C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR0680Z | CoolSET™ Quasi Resonant BSC014N04LS | N-Channel Power MOSFET IDH10G65C5 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP200N15N3 G | N-Channel Power MOSFET IPW65R095C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR0680Z | CoolSET™ Quasi Resonant BSC014N04LS | N-Channel Power MOSFET 1 2