The 1065353-IPS65R600E6AKMA1 is a single N-Channel MOSFET from the CoolMOS,Ñ¢ E6 series, manufactured by Infineon Technologies. It features a maximum drain-to-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 7.3 A at 25¬8C. The on-resistance (Rds On) is specified at a maximum of 600 mOhm when conducting 2.1 A at a gate-source voltage (Vgs) of 10 V. The device supports a maximum power dissipation of 63 W and operates within a temperature range of -55¬8C to 150¬8C. The MOSFET is packaged in a TO-251-3 configuration with stub leads, suitable for through-hole mounting. It has a maximum gate charge (Qg) of 23 nC at 10 V and an input capacitance (Ciss) of 440 pF at 100 V. The part is rated for a maximum gate-source voltage of ¬±20 V and has a moisture sensitivity level (MSL) of 1, indicating it can withstand unlimited exposure to moisture. The product is classified as obsolete, which may affect availability for new designs.
Win Source Part Number: 1065353-IPS65R600E6A
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ E6
Package: Tube
Standard Package: 1,500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: PG-TO251-3-11
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-IPS65R600E6AKMA
Base Product Number: IPS65R
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 7.3A TO251-3 Product overview: IPS65R600E6AKMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPS65R600E6AKMA1
N-Channel 650V 7.3A (Tc) 63W (Tc) Through Hole PG-TO251-3-11
MOSFET N-CH 650V 7.3A TO251-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1065353-IPS65R600E6AKMA1 | 278-IPS65R600E6AKMA1 | IPS65R600E6AKMA1-ND | IPS65R600E6AKMA1 | IPS65R600E6AKMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 650V 7.3A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | |||
| PD | 63000 milliwatts | 63000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3 | Tube | TO-251-3 Stub Leads, IPAK | TO-251-3 Stub Leads, IPak |
