Infineon Technologies AG 650V 7.3A MOSFET Transistor IPS65R600E6AKMA1

Description
MOSFET N-CH 650V 7.3A TO251-3 Product overview: IPS65R600E6AKMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPS65R600E6AKMA1 can be used for catalog matching and distributor lookup.
Request a Quote
Description
MOSFET N-CH 650V 7.3A TO251-3 Product overview: IPS65R600E6AKMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPS65R600E6AKMA1 can be used for catalog matching and distributor lookup.
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 1065353-IPS65R600E6AKMA1 is a single N-Channel MOSFET from the CoolMOS,Ñ¢ E6 series, manufactured by Infineon Technologies. It features a maximum drain-to-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 7.3 A at 25¬8C. The on-resistance (Rds On) is specified at a maximum of 600 mOhm when conducting 2.1 A at a gate-source voltage (Vgs) of 10 V. The device supports a maximum power dissipation of 63 W and operates within a temperature range of -55¬8C to 150¬8C. The MOSFET is packaged in a TO-251-3 configuration with stub leads, suitable for through-hole mounting. It has a maximum gate charge (Qg) of 23 nC at 10 V and an input capacitance (Ciss) of 440 pF at 100 V. The part is rated for a maximum gate-source voltage of ¬±20 V and has a moisture sensitivity level (MSL) of 1, indicating it can withstand unlimited exposure to moisture. The product is classified as obsolete, which may affect availability for new designs.

Datasheet Summary
Powered by GS/AI

The 1065353-IPS65R600E6AKMA1 is a single N-Channel MOSFET from the CoolMOS,Ñ¢ E6 series, manufactured by Infineon Technologies. It features a maximum drain-to-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 7.3 A at 25¬8C. The on-resistance (Rds On) is specified at a maximum of 600 mOhm when conducting 2.1 A at a gate-source voltage (Vgs) of 10 V. The device supports a maximum power dissipation of 63 W and operates within a temperature range of -55¬8C to 150¬8C. The MOSFET is packaged in a TO-251-3 configuration with stub leads, suitable for through-hole mounting. It has a maximum gate charge (Qg) of 23 nC at 10 V and an input capacitance (Ciss) of 440 pF at 100 V. The part is rated for a maximum gate-source voltage of ¬±20 V and has a moisture sensitivity level (MSL) of 1, indicating it can withstand unlimited exposure to moisture. The product is classified as obsolete, which may affect availability for new designs.

Suppliers

Company
Product
Description
Supplier Links
Singapore
650V 7.3A MOSFET Transistor
278-IPS65R600E6AKMA1
650V 7.3A MOSFET Transistor 278-IPS65R600E6AKMA1
MOSFET N-CH 650V 7.3A TO251-3 Product overview: IPS65R600E6AKMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPS65R600E6AKMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 7.3A TO251-3 Product overview: IPS65R600E6AKMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPS65R600E6AKMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPS65R600E6AKMA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPS65R600E6AKMA1-ND
Single FETs, MOSFETs IPS65R600E6AKMA1-ND
N-Channel 650V 7.3A (Tc) 63W (Tc) Through Hole PG-TO251-3-11

N-Channel 650V 7.3A (Tc) 63W (Tc) Through Hole PG-TO251-3-11

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1065353-IPS65R600E6AKMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1065353-IPS65R600E6AKMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1065353-IPS65R600E6AKMA1
Win Source Part Number: 1065353-IPS65R600E6A KMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ E6 Package: Tube Standard Package: 1,500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 210µA Power Dissipation (Max): 63W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Supplier Device Package: PG-TO251-3-11 Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: 2156-IPS65R600E6AKMA 1,SP001273092,ROCINF IPS65R600E6AKMA1 Base Product Number: IPS65R Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1065353-IPS65R600E6AKMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™ E6
Package: Tube
Standard Package: 1,500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: PG-TO251-3-11
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-IPS65R600E6AKMA1,SP001273092,ROCINFIPS65R600E6AKMA1
Base Product Number: IPS65R
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
MOSFET LOW POWER_LEGACY

MOSFET LOW POWER_LEGACY

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPS65R600E6AKMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPS65R600E6AKMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPS65R600E6AKMA1
MOSFET N-CH 650V 7.3A TO251-3

MOSFET N-CH 650V 7.3A TO251-3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-IPS65R600E6AKMA1 IPS65R600E6AKMA1-ND 1065353-IPS65R600E6AKMA1 IPS65R600E6AKMA1 IPS65R600E6AKMA1
Product Name 650V 7.3A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 650 volts
PD 63000 milliwatts 63000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data

Similar Products

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UF3C065080B7S - Acme Chip Technology Co., Limited
Specs
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
View Details
GaAs Fet Switches - KCB825 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
Single FETs, MOSFETs - 448-AIMBG120R010M1XTMA1DKR-ND - DigiKey
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
3 suppliers