The 1065353-IPS65R600E6AKMA1 is a single N-Channel MOSFET from the CoolMOS,Ñ¢ E6 series, manufactured by Infineon Technologies. It features a maximum drain-to-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 7.3 A at 25¬8C. The on-resistance (Rds On) is specified at a maximum of 600 mOhm when conducting 2.1 A at a gate-source voltage (Vgs) of 10 V. The device supports a maximum power dissipation of 63 W and operates within a temperature range of -55¬8C to 150¬8C. The MOSFET is packaged in a TO-251-3 configuration with stub leads, suitable for through-hole mounting. It has a maximum gate charge (Qg) of 23 nC at 10 V and an input capacitance (Ciss) of 440 pF at 100 V. The part is rated for a maximum gate-source voltage of ¬±20 V and has a moisture sensitivity level (MSL) of 1, indicating it can withstand unlimited exposure to moisture. The product is classified as obsolete, which may affect availability for new designs.
MOSFET N-CH 650V 7.3A TO251-3 Product overview: IPS65R600E6AKMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPS65R600E6AKMA1
N-Channel 650V 7.3A (Tc) 63W (Tc) Through Hole PG-TO251-3-11
Win Source Part Number: 1065353-IPS65R600E6A
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ E6
Package: Tube
Standard Package: 1,500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: PG-TO251-3-11
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-IPS65R600E6AKMA
Base Product Number: IPS65R
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 7.3A TO251-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPS65R600E6AKMA1 | IPS65R600E6AKMA1-ND | 1065353-IPS65R600E6AKMA1 | IPS65R600E6AKMA1 | IPS65R600E6AKMA1 |
| Product Name | 650V 7.3A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 650 volts | ||||
| PD | 63000 milliwatts | 63000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
