Infineon Technologies AG 650V 3.1A MOSFET Transistor IPS65R1K5CEAKMA1

MOSFET N-CH 650V 3.1A TO251 Product overview: IPS65R1K5CEAKMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPS65R1K5CEAKMA1 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1354449-IPS65R1K5CEAKMA1
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
Mfr: Infineon Technologies
Series: CoolMOS™ CE
Package: Tube
Product Status: Obsolete
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Base Product Number: IPS65R
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Power Dissipation (Max): 28W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

N-Channel 650V 3.1A (Tc) 28W (Tc) Through Hole TO-251