Infineon Technologies AG N-Channel 40 V 10 A MOSFET Transistor IPS105N03L G

N-Channel PowerTrench® MOSFET Logic Level 40 V, 10 A, 2.1 mΩ Product overview: IPS105N03L G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40 V, 10 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40 V, 10 A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPS105N03L G can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1065339-IPS105N03L G
Length: 6.73 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 30 V
Input Capacitance: 1.5 nF
Power Dissipation: 38 W
Height: 2.39 mm
Number of Pins: 3
Width: 6.22 mm
Rise Time: 14 ns
Fall Time: 2.4 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-251
Alternative Parts (Cross-Reference): FDA8440; STU3N62K3IPS105N03LG;
Popularity: Low
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
Mount: Through Hole
RoHS: Compliant
Min Operating Temperature: -55 °C
REACH SVHC: No SVHC
Element Configuration: Single
Max Power Dissipation: 38 W
Turn-On Delay Time: 3.7 ns
Continuous Drain Current (ID): 35 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 14 ns
Drain to Source Resistance: 10.5 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 10.5 mΩ
Threshold Voltage: 1 V