Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IPQC65R017CFD7A IPQC65R017CFD7A

Description
650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in in HDSOP-22 bottom-side cooling The 17mΩ IPQC65R017CFD7A in QDPAK bottom side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Bottom side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and 3.2mm creepage distance. Summary of Features AEC-Q101 qualified For hard- and soft-switching topologies Intrinsic fast body diode Reduced parasitic source inductance Kelvin source pin High current capability Creepage distance of 3.2 mm for HV Benefits Better utilization of PCB space Highest reliability for automotive appl. Optimized power loop Decoupling of thermals from substrate Enabling of higher power density designs Scalable for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers HV-LV DC-DC converters Auxiliary power supplies Applications AC-DC auxiliary power supplies High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles
  • Power - MOSFET (Si/SiC) - Automotive MOSFET - IPQC65R017CFD7A - IPQC65R017CFD7A - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote
Description
650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in in HDSOP-22 bottom-side cooling The 17mΩ IPQC65R017CFD7A in QDPAK bottom side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Bottom side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and 3.2mm creepage distance. Summary of Features AEC-Q101 qualified For hard- and soft-switching topologies Intrinsic fast body diode Reduced parasitic source inductance Kelvin source pin High current capability Creepage distance of 3.2 mm for HV Benefits Better utilization of PCB space Highest reliability for automotive appl. Optimized power loop Decoupling of thermals from substrate Enabling of higher power density designs Scalable for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers HV-LV DC-DC converters Auxiliary power supplies Applications AC-DC auxiliary power supplies High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IPQC65R017CFD7A is a 650 V automotive-qualified N-channel MOSFET with an integrated fast body diode, designed for PFC and resonant DC-DC converter applications. It is packaged in a PG-HDSOP-22 surface-mount package measuring 15.30 mm to 15.50 mm in length and 14.90 mm to 15.10 mm in width, with a bottom-side thermal pad for improved power density. The device has a maximum drain-source on-state resistance of 17 mΩ, a pulsed drain current of 524 A, and a gate charge of 236 nC. It supports a maximum junction temperature of 150 °C and is qualified to AEC-Q101 standards. The package includes a Kelvin source pin for improved gate control and a 3.2 mm creepage distance for high-voltage isolation.

Datasheet Summary
Powered by GS/AI

The IPQC65R017CFD7A is a 650 V automotive-qualified N-channel MOSFET with an integrated fast body diode, designed for PFC and resonant DC-DC converter applications. It is packaged in a PG-HDSOP-22 surface-mount package measuring 15.30 mm to 15.50 mm in length and 14.90 mm to 15.10 mm in width, with a bottom-side thermal pad for improved power density. The device has a maximum drain-source on-state resistance of 17 mΩ, a pulsed drain current of 524 A, and a gate charge of 236 nC. It supports a maximum junction temperature of 150 °C and is qualified to AEC-Q101 standards. The package includes a Kelvin source pin for improved gate control and a 3.2 mm creepage distance for high-voltage isolation.

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPQC65R017CFD7A - IPQC65R017CFD7A - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPQC65R017CFD7A
IPQC65R017CFD7A
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPQC65R017CFD7A IPQC65R017CFD7A
650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in in HDSOP-22 bottom-side cooling The 17mΩ IPQC65R017CFD7A in QDPAK bottom side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Bottom side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and 3.2mm creepage distance. Summary of Features AEC-Q101 qualified For hard- and soft-switching topologies Intrinsic fast body diode Reduced parasitic source inductance Kelvin source pin High current capability Creepage distance of 3.2 mm for HV Benefits Better utilization of PCB space Highest reliability for automotive appl. Optimized power loop Decoupling of thermals from substrate Enabling of higher power density designs Scalable for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers HV-LV DC-DC converters Auxiliary power supplies Applications AC-DC auxiliary power supplies High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles

650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in in HDSOP-22 bottom-side cooling

The 17mΩ IPQC65R017CFD7A in QDPAK bottom side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Bottom side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and
3.2mm creepage distance.


Summary of Features

  • AEC-Q101 qualified
  • For hard- and soft-switching topologies
  • Intrinsic fast body diode
  • Reduced parasitic source inductance
  • Kelvin source pin
  • High current capability
  • Creepage distance of 3.2 mm for HV

Benefits

  • Better utilization of PCB space
  • Highest reliability for automotive appl.
  • Optimized power loop
  • Decoupling of thermals from substrate
  • Enabling of higher power density designs
  • Scalable for use in PFC and DC-DC stage
  • Granular portfolio available

Potential Applications

  • On-board chargers
  • HV-LV DC-DC converters
  • Auxiliary power supplies

Applications

  • AC-DC auxiliary power supplies
  • High-voltage DC-DC converter for electric vehicles
  • On-board charging (OBC) for electric vehicles
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPQC65R017CFD7A
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IPQC65R017CFD7A
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 3.5 to 4.5 volts
rDS(on) 0.0170 ohms
Unlock Full Specs
to access all available technical data