The IPQC60T040S7A is a 600 V CoolMOS™ S7TA silicon MOSFET with an integrated temperature sensor, designed for low-frequency, high-current switching applications in automotive systems. It is housed in a PG-HDSOP-22 package measuring 15.50 mm by 15.10 mm, with a thermal resistance junction-to-case of 0.46 °C/W. The device has a maximum drain-source on-state resistance of 0.040 Ω at 25 °C and supports a pulsed drain current of 203 A. The embedded temperature sensor enables accurate junction temperature monitoring for protection and thermal utilization, with a forward voltage of 1.734 V at 175 °C and a temperature coefficient of 5.96 mV/K. It meets AEC-Q101 qualification standards and is rated for an operating junction temperature up to 175 °C during a 50-hour application lifetime.
600 V CoolMOS™ S7TA SJ MOSFET with integrated temperature sensor in QDAPK BSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy
The CoolMOS™ S7TA with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation and functional safety. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, Battery Disconnect, and eFuses.
The temperature sensor enhances CoolMOS™ S7A features, allowing the best possible utilization of the power transistor.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPQC60T040S7A |
| Product Name | Power - MOSFET (Si/SiC) - Automotive MOSFET - IPQC60T040S7A |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| VGS(off) | 3.5 to 4.5 volts |
