The IPQC60T010S7A is a 600 V CoolMOS™ S7A silicon MOSFET with an integrated temperature sensor, designed for high-current, low-frequency switching applications such as solid-state relays and circuit breakers. It is housed in a PG-HDSOP-22 package measuring 15.30 to 15.50 mm by 14.90 to 15.10 mm, with a maximum thickness of 2.35 mm. The device has a maximum drain-source on-state resistance of 10 mΩ, a pulsed drain current rating of 796 A, and an operating junction temperature range of -40°C to 150°C, with a transient limit of 175°C for up to 50 hours. It is qualified to AEC-Q101 and features a temperature sensor that enables enhanced thermal utilization and diagnostics. Thermal resistance from junction to case is 0.18 °C/W, and to ambient on a minimal footprint PCB is 62 °C/W.
600 V CoolMOS™ S7TA SJ MOSFET with integrated temperature sensor in Q-DPAK BSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy
The CoolMOS™ S7TA with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation and functional safety. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, battery disconnect, and eFuses.
The temperature sensor enhances CoolMOS™ S7A features, allowing the best possible utilization of the power transistor.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPQC60T010S7A |
| Product Name | Power - MOSFET (Si/SiC) - Automotive MOSFET - 600V-800V N-Channel Automotive MOSFET - 600 V CoolMOS™ S7A / S7TA - IPQC60T010S7A |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| VGS(off) | 3.5 to 4.5 volts |
| rDS(on) | 0.0100 ohms |
