The IPQC60R040S7A is a 600 V silicon superjunction MOSFET designed for low-frequency switching in automotive applications such as circuit breakers and diode replacement in bridge rectifiers. It features a QDPAK package with bottom-side cooling, dimensions of 15.50 mm x 15.10 mm, and is MSL1 compliant. The device has a maximum on-state resistance of 40 mΩ at 13 A and 12 V gate drive, a continuous drain current rating of 14 A, and a pulsed drain current of 207 A. It includes a Kelvin source pin to reduce parasitic inductance and improve high-current switching stability. The part is qualified to AEC-Q101 and operates with a junction temperature range of -40°C to 150°C, with extended operation up to 175°C for up to 50 hours. Thermal resistance from junction to case is 0.46 °C/W. The internal body diode has a forward voltage of 0.82 V at 13 A.
Infineon’s lowest RDS(on)* A SJ MOSFET in the novel bottom-side-cooled QDPAK package, ideal for low-frequency switching automotive applications.
The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET family is optimized to offer low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for HV solid state power distribution applications (HV eFuse, Solid State Circuit breaker) and active line rectification. The QDPAK-BSC package provides the intrinsic superior thermal and overload capabilities while enabling customers to utilize standardized SMD cooling and mounting techniques.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPQC60R040S7A |
| Product Name | Power - MOSFET (Si/SiC) - Automotive MOSFET - 600V-800V N-Channel Automotive MOSFET - 600 V CoolMOS™ S7A / S7TA - IPQC60R040S7A |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| VGS(off) | 3.5 to 4.5 volts |
| rDS(on) | 0.0400 ohms |
