Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - 600V-800V N-Channel Automotive MOSFET - 600 V CoolMOS™ S7A / S7TA - IPQC60R040S7A IPQC60R040S7A

Description
Infineon’s lowest RDS(on)* A SJ MOSFET in the novel bottom-side-cooled QDPAK package, ideal for low-frequency switching automotive applications. The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET family is optimized to offer low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for HV solid state power distribution applications (HV eFuse, Solid State Circuit breaker) and active line rectification. The QDPAK-BSC package provides the intrinsic superior thermal and overload capabilities while enabling customers to utilize standardized SMD cooling and mounting techniques. Summary of Features Lowest RDS(on) Compact bottom-side-cooled QDPAK package Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin-source pin improves switching performance at high current Benefits Minimizes conduction losses Increases energy efficiency More compact and easier designs Lower TCO cost or BOM cost Potential Applications HV eFuse HV eDisconnect On-board charger
Request a Quote Datasheet
Description
Infineon’s lowest RDS(on)* A SJ MOSFET in the novel bottom-side-cooled QDPAK package, ideal for low-frequency switching automotive applications. The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET family is optimized to offer low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for HV solid state power distribution applications (HV eFuse, Solid State Circuit breaker) and active line rectification. The QDPAK-BSC package provides the intrinsic superior thermal and overload capabilities while enabling customers to utilize standardized SMD cooling and mounting techniques. Summary of Features Lowest RDS(on) Compact bottom-side-cooled QDPAK package Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin-source pin improves switching performance at high current Benefits Minimizes conduction losses Increases energy efficiency More compact and easier designs Lower TCO cost or BOM cost Potential Applications HV eFuse HV eDisconnect On-board charger
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Automotive MOSFET - 600V-800V N-Channel Automotive MOSFET - 600 V CoolMOS™ S7A / S7TA - IPQC60R040S7A - IPQC60R040S7A - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - 600V-800V N-Channel Automotive MOSFET - 600 V CoolMOS™ S7A / S7TA - IPQC60R040S7A
IPQC60R040S7A
Power - MOSFET (Si/SiC) - Automotive MOSFET - 600V-800V N-Channel Automotive MOSFET - 600 V CoolMOS™ S7A / S7TA - IPQC60R040S7A IPQC60R040S7A
Infineon’s lowest RDS(on)* A SJ MOSFET in the novel bottom-side-cooled QDPAK package, ideal for low-frequency switching automotive applications. The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET family is optimized to offer low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for HV solid state power distribution applications (HV eFuse, Solid State Circuit breaker) and active line rectification. The QDPAK-BSC package provides the intrinsic superior thermal and overload capabilities while enabling customers to utilize standardized SMD cooling and mounting techniques. Summary of Features Lowest RDS(on) Compact bottom-side-cooled QDPAK package Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin-source pin improves switching performance at high current Benefits Minimizes conduction losses Increases energy efficiency More compact and easier designs Lower TCO cost or BOM cost Potential Applications HV eFuse HV eDisconnect On-board charger

Infineon’s lowest RDS(on)* A SJ MOSFET in the novel bottom-side-cooled QDPAK package, ideal for low-frequency switching automotive applications.

The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET family is optimized to offer low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for HV solid state power distribution applications (HV eFuse, Solid State Circuit breaker) and active line rectification. The QDPAK-BSC package provides the intrinsic superior thermal and overload capabilities while enabling customers to utilize standardized SMD cooling and mounting techniques.


Summary of Features

  • Lowest RDS(on)
  • Compact bottom-side-cooled QDPAK package
  • Optimized for conduction performance
  • Improved thermal resistance
  • High pulse current capability
  • Kelvin-source pin improves switching performance at high current

Benefits

  • Minimizes conduction losses
  • Increases energy efficiency
  • More compact and easier designs
  • Lower TCO cost or BOM cost

Potential Applications

  • HV eFuse
  • HV eDisconnect
  • On-board charger
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPQC60R040S7A
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - 600V-800V N-Channel Automotive MOSFET - 600 V CoolMOS™ S7A / S7TA - IPQC60R040S7A
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 3.5 to 4.5 volts
rDS(on) 0.0400 ohms
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