Infineon Technologies AG Single FETs, MOSFETs IPP80N08S406AKSA1

N-Channel 80V 80A (Tc) 150W (Tc) Through Hole PG-TO220-3-1

MOSFET N-CH 80V 80A TO220-3 Product overview: IPP80N08S406AKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 80A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 80A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP80N08S406AKSA1 can be used for catalog matching and distributor lookup.

Win Source Part Number: 990593-IPP80N08S406AKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 150W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-IPP80N08S406AKSA1,INFINFIPP80N08S406AKSA1,SP000984298
Base Product Number: IPP80N08
Drive Voltage (Max Rds On, Min Rds On): 10V