Infineon Technologies AG Single FETs, MOSFETs IPP80N06S3L-08

Description
N-Channel 55V 80A (Tc) 105W (Tc) Through Hole PG-TO220-3-1
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Description
N-Channel 55V 80A (Tc) 105W (Tc) Through Hole PG-TO220-3-1
Request a Quote Datasheet

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Single FETs, MOSFETs - IPP80N06S3L-08IN-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPP80N06S3L-08IN-ND
Single FETs, MOSFETs IPP80N06S3L-08IN-ND
N-Channel 55V 80A (Tc) 105W (Tc) Through Hole PG-TO220-3-1

N-Channel 55V 80A (Tc) 105W (Tc) Through Hole PG-TO220-3-1

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N06S3L-08 - 776920-IPP80N06S3L-08 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N06S3L-08
776920-IPP80N06S3L-08
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N06S3L-08 776920-IPP80N06S3L-08
Manufacturer: Infineon Technologies Win Source Part Number: 776920-IPP80N06S3L-0 8 Series: OptiMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Part Status: Obsolete(EOL) Family Name: IPP80N06S3L-08 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Manufacturer Package: PG-TO220-3-1 Channel Type Type: N Drain Source Voltage: 55V Vgs(th) (Maximum) @ Id: 2.2V @ 55μA Gate Charge (Qg) (Maximum) @ Vgs: 134nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6475pF @ 25V Vgs (Maximum): ±16V Power Dissipation (Maximum): 105W (Tc) Rds On (Maximum) @ Id, Vgs: 7.9 mOhm @ 43A, 10V Alternative Parts (Cross-Reference): BUK7510-55AL,127; BUK9514-55A,127; BUK7510-55AL; BUK7514-55A; Introduction Date: September 16, 2005 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 776920-IPP80N06S3L-08
Series: OptiMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete(EOL)
Family Name: IPP80N06S3L-08
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Manufacturer Package: PG-TO220-3-1
Channel Type Type: N
Drain Source Voltage: 55V
Vgs(th) (Maximum) @ Id: 2.2V @ 55μA
Gate Charge (Qg) (Maximum) @ Vgs: 134nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6475pF @ 25V
Vgs (Maximum): ±16V
Power Dissipation (Maximum): 105W (Tc)
Rds On (Maximum) @ Id, Vgs: 7.9 mOhm @ 43A, 10V
Alternative Parts (Cross-Reference): BUK7510-55AL,127; BUK9514-55A,127; BUK7510-55AL; BUK7514-55A;
Introduction Date: September 16, 2005
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPP80N06S3L-08 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPP80N06S3L-08
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPP80N06S3L-08
MOSFET N-CH 55V 80A TO220-3

MOSFET N-CH 55V 80A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPP80N06S3L-08IN-ND 776920-IPP80N06S3L-08 IPP80N06S3L-08
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N06S3L-08 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3
Transistor Grade / Operating Range Automotive
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