Infineon Technologies AG Single FETs, MOSFETs IPP80N06S3-07

Description
N-Channel 55V 80A (Tc) 135W (Tc) Through Hole PG-TO220-3-1
Request a Quote Datasheet
Description
N-Channel 55V 80A (Tc) 135W (Tc) Through Hole PG-TO220-3-1
Request a Quote Datasheet

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Single FETs, MOSFETs - IPP80N06S3-07-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPP80N06S3-07-ND
Single FETs, MOSFETs IPP80N06S3-07-ND
N-Channel 55V 80A (Tc) 135W (Tc) Through Hole PG-TO220-3-1

N-Channel 55V 80A (Tc) 135W (Tc) Through Hole PG-TO220-3-1

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N06S3-07 - 1046038-IPP80N06S3-07 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N06S3-07
1046038-IPP80N06S3-07
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N06S3-07 1046038-IPP80N06S3-07
Manufacturer: Infineon Technologies Win Source Part Number: 1046038-IPP80N06S3-0 7 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 80μA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 7768pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.8 mOhm @ 51A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Application Field: Used in Industrial

Manufacturer: Infineon Technologies
Win Source Part Number: 1046038-IPP80N06S3-07
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 135W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 80μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 7768pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.8 mOhm @ 51A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPP80N06S3-07 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPP80N06S3-07
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPP80N06S3-07
MOSFET N-CH 55V 80A TO220-3

MOSFET N-CH 55V 80A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPP80N06S3-07-ND 1046038-IPP80N06S3-07 IPP80N06S3-07
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N06S3-07 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; PG-TO220-3-1 170 nC @ 10 V
Transistor Grade / Operating Range Automotive
V(BR)DSS 55 volts
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