Infineon Technologies AG Single FETs, MOSFETs IPP80N06S208AKSA1

Description
N-Channel 55V 80A (Tc) 215W (Tc) Through Hole PG-TO220-3-1
Request a Quote Datasheet
Description
N-Channel 55V 80A (Tc) 215W (Tc) Through Hole PG-TO220-3-1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IPP80N06S208AKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPP80N06S208AKSA1-ND
Single FETs, MOSFETs IPP80N06S208AKSA1-ND
N-Channel 55V 80A (Tc) 215W (Tc) Through Hole PG-TO220-3-1

N-Channel 55V 80A (Tc) 215W (Tc) Through Hole PG-TO220-3-1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPP80N06S208AKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPP80N06S208AKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPP80N06S208AKSA1
MOSFET N-CH 55V 80A TO220-3

MOSFET N-CH 55V 80A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number IPP80N06S208AKSA1-ND IPP80N06S208AKSA1
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 17280780 - Radwell International
Infineon Technologies AG
View Details
TRANSISTORS - Transistors (BJT) - Single - 2N3904TF - 854966-2N3904TF - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor - T2G6001528-Q3 - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-200
Power Gain 15.5 dB
View Details
4 suppliers