Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N04S3-H4 IPP80N04S3-H4

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065313-IPP80N04S3-H 4 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 40 V Input Capacitance: 3.9 nF Power Dissipation: 115 W Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220-3 Alternative Parts (Cross-Reference): IPP80N04S3-H4IPP80N0 4S3H4; IPP80N04S3H4AKSA1; Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Shortage Mount: Through Hole RoHS: Compliant Max Power Dissipation: 115 W Package Quantity: 500 Continuous Drain Current (ID): 80 A Rds On Max: 4.8 mΩ
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N04S3-H4 - 1065313-IPP80N04S3-H4 - Win Source Electronics
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Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065313-IPP80N04S3-H 4 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 40 V Input Capacitance: 3.9 nF Power Dissipation: 115 W Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220-3 Alternative Parts (Cross-Reference): IPP80N04S3-H4IPP80N0 4S3H4; IPP80N04S3H4AKSA1; Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Shortage Mount: Through Hole RoHS: Compliant Max Power Dissipation: 115 W Package Quantity: 500 Continuous Drain Current (ID): 80 A Rds On Max: 4.8 mΩ
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N04S3-H4 - 1065313-IPP80N04S3-H4 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N04S3-H4
1065313-IPP80N04S3-H4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N04S3-H4 1065313-IPP80N04S3-H4
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065313-IPP80N04S3-H 4 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 40 V Input Capacitance: 3.9 nF Power Dissipation: 115 W Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220-3 Alternative Parts (Cross-Reference): IPP80N04S3-H4IPP80N0 4S3H4; IPP80N04S3H4AKSA1; Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Shortage Mount: Through Hole RoHS: Compliant Max Power Dissipation: 115 W Package Quantity: 500 Continuous Drain Current (ID): 80 A Rds On Max: 4.8 mΩ

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1065313-IPP80N04S3-H4
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 40 V
Input Capacitance: 3.9 nF
Power Dissipation: 115 W
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-220-3
Alternative Parts (Cross-Reference): IPP80N04S3-H4IPP80N04S3H4; IPP80N04S3H4AKSA1;
Popularity: Low
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Shortage
Mount: Through Hole
RoHS: Compliant
Max Power Dissipation: 115 W
Package Quantity: 500
Continuous Drain Current (ID): 80 A
Rds On Max: 4.8 mΩ

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1065313-IPP80N04S3-H4
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N04S3-H4
PD 115000 milliwatts
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