IPP70N10S3L-12 is an N-channel enhancement mode MOSFET designed for high-current switching applications, housed in a PG-TO220-3-1 package. It has a continuous drain current rating of 70 A at 25°C and a maximum drain-source voltage of 100 V. The device features a typical drain-source on-state resistance of 10.1 mΩ at V_GS=10 V and I_D=70 A, with an operating junction temperature range of -55°C to +175°C. It is AEC-Q101 qualified, RoHS compliant, and 100% avalanche tested, with a single-pulse avalanche energy rating of 410 mJ at I_D=35 A. Thermal resistance from junction to case is 1.2 K/W.
MOSFET N-Ch 100V 70A TO220-3 OptiMOS-T
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPP70N10S3L-12 |
| Product Name | MOSFET |
