Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R280E6 IPP65R280E6

Manufacturer: Infineon Technologies Win Source Part Number: 1046017-IPP65R280E6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 13.8A (Tc) Gate-Source Threshold Voltage: 3.5V @ 440μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 950pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 4.4A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient