MOSFET N-CH 650V 31.2A TO220-3 Product overview: IPP65R110CFDAAKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 31.2A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 31.2A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP65R110CFDAAKS
Manufacturer: Infineon Technologies
Win Source Part Number: 874857-IPP65R110CFDA
Series: Automotive, AEC-Q101, CoolMOS™
Operating Temperature Range: -40°C ~ 150°C (TJ)
Features: N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: IPP65R110
Categories: Discrete Semiconductor Products
Case / Package: PG-TO220-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 89 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
N-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3
MOSFET N-Ch 650V 31.2A TO220-3
MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 650V 31.2A TO220-3
MOSFET N-CH 650V 31.2A TO220-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPP65R110CFDAAKSA1 | 874857-IPP65R110CFDAAKSA1 | 448-IPP65R110CFDAAKSA1-ND | IPP65R110CFDAAKSA1 | 39AH8926 | IPP65R110CFDAAKSA1 | IPP65R110CFDAAKSA1 |
| Product Name | 650V 31.2A TO220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R110CFDAAKSA1 | Single FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, N-Ch, 650V, To-220-3; Transistor Polarity Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 650 volts | 650 volts | |||||
| PD | 278 milliwatts | 277800 milliwatts | |||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
