Infineon Technologies AG Single FETs, MOSFETs IPP60R600CPXKSA1

N-Channel 600V 6.1A (Tc) 60W (Tc) Through Hole PG-TO220-3

MOSFET N-CH 600V 6.1A TO220-3 Product overview: IPP60R600CPXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.1A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.1A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP60R600CPXKSA1 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1046007-IPP60R600CPXKSA1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.1A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 220μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 550pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient