N-Channel 80V 120A (Tc) 375W (Tc) Through Hole PG-TO220-3
Manufacturer: Infineon Technologies
Win Source Part Number: 808936-IPP020N08N5AK
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80V
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 375W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2mOhm at 100A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 223nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 16900pF at 40V
Current - Continuous Drain (Id) at 25°C: 120A (Tc)
Vgs(th) (Maximum) at Id: 3.8V at 280μA
Maximum Vgs: ±20V
MOSFET N-CH 80V 120A TO220-3 Product overview: IPP020N08N5AKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 120A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 120A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP020N08N5AKSA1
MOSFET, N-CH, 80V, 120A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 80V 120A TO220-3
| DigiKey | Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 448-IPP020N08N5AKSA1-ND | 808936-IPP020N08N5AKSA1 | 2224691P | 278-IPP020N08N5AKSA1 | 12AC9721 | IPP020N08N5AKSA1 | IPP020N08N5AKSA1 |
| Product Name | Single FETs, MOSFETs | FETs - Single - IPP020N08N5AKSA1 | MOSFETs | 80V 120A TO220 MOSFET Transistor | Mosfet, N-Ch, 80V, 120A, 175Deg C, 375W; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220 | Tube | TO-3 | 6V, 10V | |
| PD | 375000 milliwatts | 375 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Packing Method | Tube; Tube | Tube | Tube; Tube |
